Factory Lead Time  

12 Weeks

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

380W Tc

Turn Off Delay Time  

110 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2005

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

1.9MOhm

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

380W

Case Connection  

DRAIN

Turn On Delay Time  

66 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.4m Ω @ 165A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

11210pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

140nC @ 4.5V

Rise Time  

220ns

Vgs (Max)  

±16V

Fall Time (Typ)  

110 ns

Continuous Drain Current (ID)  

270A

Threshold Voltage  

2.5V

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

60V

Avalanche Energy Rating (Eas)  

290 mJ

Nominal Vgs  

2.5 V

Height  

4.826mm

Length  

10.668mm

Width  

9.652mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free